Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

J.-B. Fonder, L. Chevalier, C. Genevois, Olivier Latry, C. Duperrier, Farid Temcamani, H. Maanane. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. Microelectronics Reliability, 52(9-10):2205-2209, 2012. [doi]

Abstract

Abstract is missing.