Experimental Study on Effects of Boron Transient Enhanced Diffusion on Channel Size Dependences of Low Frequency Noise in NMOSFETs

Shuntaro Fujii, Isao Maru, Soichi Morita, Tsutomu Miyazaki. Experimental Study on Effects of Boron Transient Enhanced Diffusion on Channel Size Dependences of Low Frequency Noise in NMOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-5, IEEE, 2019. [doi]

Abstract

Abstract is missing.