Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal

Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki. Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. Microelectronics Reliability, 49(4):357-364, 2009. [doi]

Abstract

Abstract is missing.