A 113mm2 32Gb 3b/cell NAND flash memory

Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Teruhiko Kamei, Hiroaki Nasu, Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko, Masahide Matsumoto, Toshihiko Himeno, Toshifumi Hashimoto, Yi-Ching Liu, Hardwell Chibvongodze, Takamitsu Hori, Manabu Sakai, Hong Ding, Yoshiharu Takeuchi, Hitoshi Shiga, Norifumi Kajimura, Yasuyuki Kajitani, Kiyofumi Sakurai, Kosuke Yanagidaira, Toshihiro Suzuki, Yuko Namiki, Tomofumi Fujimura, Man Mui, Hao Nguyen, Seungpil Lee, Alex Mak, Jeffery Lutze, Tooru Maruyama, Toshiharu Watanabe, Takahiko Hara, Shigeo Ohshima. A 113mm2 32Gb 3b/cell NAND flash memory. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 242-243, IEEE, 2009. [doi]

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