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New stable loadless 6T dual-port SRAM cell design

Antara Ganguly, Sangeeta Goyal, Sneha Bhatia, Anuj Grover. New stable loadless 6T dual-port SRAM cell design. In 20th International Symposium on VLSI Design and Test, VDAT 2016, Guwahati, India, May 24-27, 2016. pages 1-6, IEEE, 2016. [doi]

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