J. Gao, Y. Jin, B. Xie, C. P. Wen, Y. Hao, M. Wang. GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]
Abstract is missing.