Study of hot-carrier effects on power RF LDMOS device reliability

M. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline. Study of hot-carrier effects on power RF LDMOS device reliability. Microelectronics Reliability, 47(9-11):1394-1399, 2007. [doi]

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