The following publications are possibly variants of this publication:
- RF performance reliability of power N-LDMOS under pulsed-RF aging life test in radar application S-bandMohamed Ali Belaïd, Ahmed Almusallam, Mohamed Masmoudi. iet-cds, 14(6):805-810, 2020. [doi]
- Study of hot-carrier effects on power RF LDMOS device reliabilityM. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline. mr, 47(9-11):1394-1399, 2007. [doi]
- Characterization and modeling of hot carrier injection in LDMOS for L-band radar applicationL. Lachéze, O. Latry, P. Dherbécourt, K. Mourgues, V. Purohit, H. Maanane, J. P. Sipma, F. Cornu, Ph. Eudeline. mr, 51(8):1289-1294, 2011. [doi]
- S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effectsM. A. Belaïd, M. Gares, K. Daoud, Ph. Eudeline. mr, 51(9-11):1551-1556, 2011. [doi]
- Reliability study of Power RF LDMOS for Radar ApplicationHichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, M. A. Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata. mr, 44(9-11):1449-1454, 2004. [doi]