Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Phil Mawby. Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-10, IEEE, 2020. [doi]

Abstract

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