2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications

Zheng Guo, Daeyeon Kim, Satyanand Nalam, Jami Wiedemer, Xiaofei Wang, Eric Karl. 2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 196-198, IEEE, 2018. [doi]

Abstract

Abstract is missing.