A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array - researchr publication

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Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, Hoi-Jun Yoo. A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-In-Memory Macro With Segmented BL and Reference Cell Array. IEEE Trans. Circuits Syst. II Express Briefs, 69(5):2433-2437, 2022. [doi]

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