Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMs

Sungmock Ha, S. Lee, G. H. Bae, D.-S. Lee, S. H. Kim, B. W. Woo, N. H. Lee, Y. S. Lee, S. Pae. Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMs. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-7, IEEE, 2023. [doi]

Abstract

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