Direct integration of field effect transistors as electro mechanical transducer for stress - researchr publication

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S. Haas, D. Reuter, Andreas Bertz, Thomas Gessner, M. Schramm, K.-U. Loebel, J. T. Horstmann. Direct integration of field effect transistors as electro mechanical transducer for stress. In Seventh International Conference on Sensing Technology, ICST 2013, Wellington, New Zealand, December 3-5, 2013. pages 379-382, IEEE, 2013. [doi]

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