Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures

Sara Hamzeloui, F. Ciabattini, Akshay M. Arabhavi, W. Quan, D. Marti, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi. Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures. In 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022. pages 108-111, IEEE, 2022. [doi]

Abstract

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