Radiation-Hardened 0.3-0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-nm Technology for Space Applications

Yuanyuan Han, Xu Cheng 0002, Jun Han 0003, Xiaoyang Zeng. Radiation-Hardened 0.3-0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-nm Technology for Space Applications. IEEE Trans. VLSI Syst., 28(4):1089-1093, 2020. [doi]

Abstract

Abstract is missing.