Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li 0051. Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. Microelectronics Journal, 134:105687, April 2023. [doi]
@article{HanZCSTL23,
title = {Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio},
author = {Tian Han and Fazhan Zhao and Xiaowu Cai and Liang Shan and Yun Tang and Bo Li 0051},
year = {2023},
month = {April},
doi = {10.1016/j.mejo.2022.105687},
url = {https://doi.org/10.1016/j.mejo.2022.105687},
researchr = {https://researchr.org/publication/HanZCSTL23},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {134},
pages = {105687},
}