Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance

Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den bosch, Maarten Rosmeulen. Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. In IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024. pages 1-6, IEEE, 2024. [doi]

Abstract

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