Daniel Hofstetter, Esther Baumann, Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George, Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy, Fabien Guillot, Eva Monroy. Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. Proceedings of the IEEE, 98(7):1234-1248, 2010. [doi]
Abstract is missing.