Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs - researchr publication authors

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Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu 0001, Lingli Wang, Li-Rong Zheng. Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs. In 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015. pages 1-4, IEEE, 2015. [doi]

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