Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu 0001, Lingli Wang, Li-Rong Zheng. Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs. In 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015. pages 1-4, IEEE, 2015. [doi]
@inproceedings{HuHF0WZ15,
title = {Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs},
author = {Guangxi Hu and Shuyan Hu and Jianhua Feng and Ran Liu 0001 and Lingli Wang and Li-Rong Zheng},
year = {2015},
doi = {10.1109/ASICON.2015.7517154},
url = {https://doi.org/10.1109/ASICON.2015.7517154},
researchr = {https://researchr.org/publication/HuHF0WZ15},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015},
publisher = {IEEE},
isbn = {978-1-4799-8485-5},
}