The following publications are possibly variants of this publication:
- Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETsGuangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu 0001, Lingli Wang, Li-Rong Zheng. mj, 50:60-65, 2016. [doi]
- Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETsPeicheng Li, Guangxi Hu, Ran Liu, Tingao Tang. mj, 42(10):1164-1168, 2011. [doi]
- Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunnelingChao Wang, Chunlei Wu, Jiaxin Wang, Qianqian Huang, Ru Huang. chinaf, 58(2):1-8, 2015. [doi]