D. M. Huang, C. J. Yao, D. H. Shi, M. F. Li. An empirical model for static I-V characteristics of double gate tunneling field effect transistor. In IEEE 10th International Conference on ASIC, ASICON 2013, Shenzhen, China, October 28-31, 2013. pages 1-4, IEEE, 2013. [doi]
Abstract is missing.