Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, P. Noe, V. Sousa, L. Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, R. Annunziata, Gilles Reimbold, G. Pananakakis, B. De Salvo. Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 286-289, IEEE, 2012. [doi]

Abstract

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