A 135mV 0.13μW process tolerant 6T subthreshold DTMOS SRAM in 90nm technology

Myeong-Eun Hwang, Kaushik Roy. A 135mV 0.13μW process tolerant 6T subthreshold DTMOS SRAM in 90nm technology. In Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, CICC 2008, DoubleTree Hotel, San Jose, California, USA, September 21-24, 2008. pages 419-422, IEEE, 2008. [doi]

Abstract

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