Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications - researchr publication authors

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Kazutaka Inoue, Kenta Sugawara, Ken Kikuchi, Isao Makabe, Hiroshi Yamamoto. Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

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