Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications

Kazutaka Inoue, Kenta Sugawara, Ken Kikuchi, Isao Makabe, Hiroshi Yamamoto. Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

@inproceedings{InoueSKMY19,
  title = {Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications},
  author = {Kazutaka Inoue and Kenta Sugawara and Ken Kikuchi and Isao Makabe and Hiroshi Yamamoto},
  year = {2019},
  doi = {10.1109/BCICTS45179.2019.8972761},
  url = {https://doi.org/10.1109/BCICTS45179.2019.8972761},
  researchr = {https://researchr.org/publication/InoueSKMY19},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-0586-4},
}