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Electrical degradation and recovery of dielectrics in n:::++:::-poly-Si/SiO::x::/SiO::2::/p-sub structures designed for application in low-voltage non-volatile memories

Fernanda Irrera. Electrical degradation and recovery of dielectrics in n:::++:::-poly-Si/SiO::x::/SiO::2::/p-sub structures designed for application in low-voltage non-volatile memories. Microelectronics Reliability, 41(11):1809-1813, 2001. [doi]

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