A new high-voltage tolerant I/O for improving ESD robustness - researchr publication authors

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J. T. Jang, Y.-C. Kim, W. H. Bong, E. K. Kwon, B. J. Kwon, J. S. Jeon, H. G. Kim, I. H. Son. A new high-voltage tolerant I/O for improving ESD robustness. Microelectronics Reliability, 46(9-11):1634-1637, 2006. [doi]

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