A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-Hoon Jang, Sang Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi. A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. J. Solid-State Circuits, 51(1):204-212, 2016. [doi]

Abstract

Abstract is missing.