Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor

Wun-Ciang Jhang, Pin-Han Chen, Chih-Chieh Hsu. Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor. In IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2022, Taipei, Taiwan, July 6-8, 2022. pages 569-570, IEEE, 2022. [doi]

Abstract

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