A 15 µm-Pitch, 8.7-ENOB, 13-Mcells/sec Logarithmic Readout Circuit for Multi-Level Cell Phase Change Memory

Dong-Hwan Jin, Ji-Wook Kwon, Hyeon-June Kim, Sun-Il Hwang, Min Chul Shin, Junho Cheon, Seung-Tak Ryu. A 15 µm-Pitch, 8.7-ENOB, 13-Mcells/sec Logarithmic Readout Circuit for Multi-Level Cell Phase Change Memory. J. Solid-State Circuits, 50(10):2431-2440, 2015. [doi]

Abstract

Abstract is missing.