Mark Johnson, Ali Al-Shamma, Derek Bosch, Matthew Crowley, Michael Farmwald, Luca Fasoli, Alper Ilkbahar, Bendik Kleveland, Thomas H. Lee, Tz-Yi Liu, Quang Nguyen, Roy Scheuerlein, Kenneth So, Tyler Thorp. 512-Mb PROM with a three-dimensional array of diode/antifuse memory cells. J. Solid-State Circuits, 38(11):1920-1928, 2003. [doi]
@article{JohnsonABCFFIKL03,
title = {512-Mb PROM with a three-dimensional array of diode/antifuse memory cells},
author = {Mark Johnson and Ali Al-Shamma and Derek Bosch and Matthew Crowley and Michael Farmwald and Luca Fasoli and Alper Ilkbahar and Bendik Kleveland and Thomas H. Lee and Tz-Yi Liu and Quang Nguyen and Roy Scheuerlein and Kenneth So and Tyler Thorp},
year = {2003},
doi = {10.1109/JSSC.2003.818147},
url = {https://doi.org/10.1109/JSSC.2003.818147},
researchr = {https://researchr.org/publication/JohnsonABCFFIKL03},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {38},
number = {11},
pages = {1920-1928},
}