The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

Hak-Kee Jung. The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution. J. Inform. and Commun. Convergence Engineering, 10(2):200-204, 2012. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.