A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT

Teruo Jyo, Hiroshi Hamada, Munehiko Nagatani, Hitoshi Wakita, Ibrahim Abdo, Miwa Mutoh, Yuta Shiratori, Kenichi Okada, Atsushi Shirane, Hiroyuki Takahashi. A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT. In 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022. pages 152-155, IEEE, 2022. [doi]

Abstract

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