Masanobu Kaneda, Kazuma Ariyoshi, Satoshi Matsumoto. Comparisons of instability in device characteristics at high temperature for thin-film SOI power n- and p- channel MOSFETs. In 2020 IEEE Region 10 Conference, TENCON 2020, Osaka, Japan, November 16-19, 2020. pages 134-139, IEEE, 2020. [doi]
Abstract is missing.