Physical understanding and optimization of resistive switching characteristics in oxide-RRAM

J. F. Kang, P. Huang, Z. Chen, Y. D. Zhao, C. Liu, R. Z. Han, L. F. Liu, X. Y. Liu, Y. Y. Wang, B. Gao. Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 154-159, IEEE, 2016. [doi]

@inproceedings{KangHCZLHLLWG16,
  title = {Physical understanding and optimization of resistive switching characteristics in oxide-RRAM},
  author = {J. F. Kang and P. Huang and Z. Chen and Y. D. Zhao and C. Liu and R. Z. Han and L. F. Liu and X. Y. Liu and Y. Y. Wang and B. Gao},
  year = {2016},
  doi = {10.1109/ESSDERC.2016.7599610},
  url = {http://dx.doi.org/10.1109/ESSDERC.2016.7599610},
  researchr = {https://researchr.org/publication/KangHCZLHLLWG16},
  cites = {0},
  citedby = {0},
  pages = {154-159},
  booktitle = {46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-2969-3},
}