7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, AnSoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi. 7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 130-131, IEEE, 2016. [doi]

Abstract

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