Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs

Takamasa Kawanago, Ryo Ikoma, Tomoaki Oba, Hiroyuki Takagi. Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 114-117, IEEE, 2017. [doi]

Abstract

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