Independent-Gate P-Type TFETs using Double Heterojunction Structures

Shengwei Ke, Jianping Hu, Xiaoxiao Xu. Independent-Gate P-Type TFETs using Double Heterojunction Structures. In IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019. pages 1-5, IEEE, 2019. [doi]

Abstract

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