Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies

A. Kerber. Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]

Abstract

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