A novel approach to analyze self-heating effect in MOSFET transistors

Ararat Khachatryan. A novel approach to analyze self-heating effect in MOSFET transistors. In 2017 IEEE East-West Design & Test Symposium, EWDTS 2017, Novi Sad, Serbia, September 29 - October 2, 2017. pages 1-4, IEEE Computer Society, 2017. [doi]

Abstract

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