Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling

Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez. Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

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