A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications

Win-San Khwa, Meng-Fan Chang, Jau-Yi Wu, Ming-Hsiu Lee, Tzu-Hsiang Su, Keng-Hao Yang, Tien-Fu Chen, Tien-Yen Wang, Hsiang-Pang Li, Matthew J. BrightSky, Sangbum Kim, Hsiang-Lam Lung, Chung Lam. A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications. J. Solid-State Circuits, 52(1):218-228, 2017. [doi]

Abstract

Abstract is missing.