A 30 ns 16 Mb 2 b/cell Embedded Flash with Ramped Gate Time-Domain Sensing Scheme for Automotive Application

Sebastian Kiesel, Thomas Kern, Bernhard Wicht, Helmut Graeb. A 30 ns 16 Mb 2 b/cell Embedded Flash with Ramped Gate Time-Domain Sensing Scheme for Automotive Application. In International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019, Hsinchu, Taiwan, April 22-25, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

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