A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking

Jung Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Joo-Sun Choi, Young-Hyun Jun. A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. J. Solid-State Circuits, 47(1):107-116, 2012. [doi]

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