A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking

Jung Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Joo-Sun Choi, Young-Hyun Jun. A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. J. Solid-State Circuits, 47(1):107-116, 2012. [doi]

@article{KimOLLHHNMKPRPKKKBCJHLCJ12,
  title = {A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking},
  author = {Jung Sik Kim and Chi Sung Oh and Hocheol Lee and Donghyuk Lee and Hyong-Ryol Hwang and Sooman Hwang and Byongwook Na and Joungwook Moon and Jin Guk Kim and Hanna Park and Jang-Woo Ryu and Kiwon Park and Sang-Kyu Kang and So-Young Kim and Hoyoung Kim and Jong-Min Bang and Hyunyoon Cho and Minsoo Jang and Cheolmin Han and Jung-Bae Lee and Joo-Sun Choi and Young-Hyun Jun},
  year = {2012},
  doi = {10.1109/JSSC.2011.2164731},
  url = {http://dx.doi.org/10.1109/JSSC.2011.2164731},
  researchr = {https://researchr.org/publication/KimOLLHHNMKPRPKKKBCJHLCJ12},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {47},
  number = {1},
  pages = {107-116},
}