A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking

Jung Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun. A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. In IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011. pages 496-498, IEEE, 2011. [doi]

@inproceedings{KimOLLHHNMKPRPKKKBCJHLKCJ11,
  title = {A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking},
  author = {Jung Sik Kim and Chi Sung Oh and Hocheol Lee and Donghyuk Lee and Hyong-Ryol Hwang and Sooman Hwang and Byongwook Na and Joungwook Moon and Jin Guk Kim and Hanna Park and Jang-Woo Ryu and Kiwon Park and Sang-Kyu Kang and So-Young Kim and Hoyoung Kim and Jong-Min Bang and Hyunyoon Cho and Minsoo Jang and Cheolmin Han and Jung-Bae Lee and Kyehyun Kyung and Joo-Sun Choi and Young-Hyun Jun},
  year = {2011},
  doi = {10.1109/ISSCC.2011.5746413},
  url = {http://dx.doi.org/10.1109/ISSCC.2011.5746413},
  researchr = {https://researchr.org/publication/KimOLLHHNMKPRPKKKBCJHLKCJ11},
  cites = {0},
  citedby = {0},
  pages = {496-498},
  booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011},
  publisher = {IEEE},
  isbn = {978-1-61284-303-2},
}