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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

Hyunchul Kim, JongEun Park, Insung Joe, Doowon Kwon, Joo Hyoung Kim, Dongsuk Cho, Taehun Lee, ChangKyu Lee, Haeyong Park, Soojin Hong, Chongkwang Chang, Jingyun Kim, Hanjin Lim, Youngsun Oh, Yitae Kim, Seungjoo Nah, Sangil Jung, Jaekyu Lee, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang. 5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. In 2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020. pages 104-106, IEEE, 2020. [doi]

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