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Properties of A1/BaTa2O6/GaN MIS Structure

J. K. Kim, S. H. Won, Ki-Seok Chung, H. D. Cho, T. W. Kang, T. S. Nam, C. S. Kang, C. H. Yi, D. S. Kim. Properties of A1/BaTa2O6/GaN MIS Structure. In Hamid R. Arabnia, Laurence Tianruo Yang, editors, Proceedings of the International Conference on VLSI, VLSI 03, June 23 - 26, 2003, Las Vegas, Nevada, USA. pages 240-243, CSREA Press, 2003.

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