Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks

M. P. King, J. R. Dickerson, S. DasGupta, M. J. Marinella, R. J. Kaplar, Daniel Piedra, M. Sun, Tomas Palacios. Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

Abstract

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